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Brand Name : Integrated Silicon Solution, Inc.
Model Number : IS61WV102416BLL-10TLI
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
IS61WV102416BLL-10TLI 1Mx16 High-Speed 10ns SRAM 3.3V Operation Low Power Industrial Temp (-40°C to +85°C) 48-ball BGA Package Asynchronous Operation High Reliability Data Retention
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE op tions
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
Vdd 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for
Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
Applications
1:Industrial Automation (PLCs, robotics)
2:Automotive Electronics (ECUs, ADAS)
3:Networking Equipment (routers, switches)
4:Embedded Systems (audio/video processing, aerospace)
5:High-Speed Data Buffering/Caching
Description
The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-perfor mance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be re duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The device is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
INFORMATION
| Category |  | |
| Mfr |  | |
| Series | - |  | 
| Packaging | Tray |  | 
| Part Status | Active |  | 
| DigiKey Programmable | Not Verified |  | 
| Memory Type | Volatile |  | 
| Memory Format |  | |
| Technology | SRAM - Asynchronous |  | 
| Memory Size |  | |
| Memory Organization | 1M x 16 |  | 
| Memory Interface | Parallel |  | 
| Write Cycle Time - Word, Page | 10ns |  | 
| Access Time | 10 ns |  | 
| Voltage - Supply | 2.4V ~ 3.6V |  | 
| Operating Temperature | -40°C ~ 85°C (TA) |  | 
| Mounting Type | Surface Mount |  | 
| Package / Case |  | |
| Supplier Device Package | 48-TSOP I |  | 
| Base Product Number | 
Drawing

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