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Brand Name : Infineon
Model Number : IRF4905PBF
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
Ultra-Low Rds(on) 0.02Ω IRF4905PBF P-Channel -55A -60V TO-220 Package High Current Robust Avalanche Rated Logic Level Gate Low Gate Charge 110nC Fast Switching High Power Efficiency
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Applications
Power Switching: Often used in power distribution systems such as motherboards, servers, and communication equipment as a high-side switch to control the power on/off of other circuits. It offers high efficiency and low voltage drop.
Motor Drive and Control: Suitable for driving high-power DC motors, such as those in robotics, industrial automation equipment, and power tools. It is commonly used in H-bridge configurations for forward/reverse rotation and speed regulation.
DC-DC Converters (Buck/Boost): In synchronous rectifier-based power conversion circuits, it can serve as a high-side switch. It is particularly suitable for applications with low input voltage (<60V) but high current requirements, significantly reducing conduction losses and improving overall efficiency.
Battery Protection and Management: As a P-MOS, it is inherently suitable for load switching in battery-powered devices. It is commonly used in lithium battery protection circuits and BMS (Battery Management Systems) to manage charge and discharge paths. Its low resistance helps reduce heat generation and extend battery life.
Inverters and UPS (Uninterruptible Power Supplies): Used for power switching and freewheeling in small to medium-power inverter bridges and backup power systems.
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO 220 contribute to its wide acceptance throughout the industry.
INFORMATION
| Category |  | |
| Mfr |  | |
| Series |  | |
| Packaging | Tube |  | 
| Part Status | Active |  | 
| FET Type |  | |
| Technology |  | |
| Drain to Source Voltage (Vdss) | 55 V |  | 
| Current - Continuous Drain (Id) @ 25°C |  | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |  | 
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V |  | 
| Vgs(th) (Max) @ Id | 4V @ 250µA |  | 
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |  | 
| Vgs (Max) | ±20V |  | 
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |  | 
| FET Feature | - |  | 
| Power Dissipation (Max) | 200W (Tc) |  | 
| Operating Temperature | -55°C ~ 175°C (TJ) |  | 
| Grade | - |  | 
| Qualification | - |  | 
| Mounting Type | Through Hole |  | 
| Supplier Device Package | TO-220AB |  | 
| Package / Case |  | |
| Base Product Number | 
Drawing

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| Ultra-Low Rds(on) 0.02Ω IRF4905PBF P-Channel -55A -60V TO-220 Package High Current Robust Avalanche Rated Logic Level Gate Low Gate Charge 110nC Fast Images | 
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